Fabrication and characterization of a ferroelectric-gate FET With a ITO/PZT/SRO/Pt stacked structure

We have demonstrated nonvolatile memory operation of a ferroelectric-gate thin film transistor (FGT) using solution-processed indium-tin-oxide (ITO) as a channel layer with combination of a PZT/SrRuO 3 /Pt gate stacked structure. A well-defined ITO/PZT interface with atomically flat PZT surface and...

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Bibliographic Details
Main Authors: Phan Trong Tue, Bui Nguyen Quoc Trinh, Miyasako, T, Tokumitsu, E, Shimoda, T
Format: Conference Proceeding
Language:English
Subjects:
Crystals
Electrodes
ferroelectric-gate thin film transistors (FGTs)
Indium tin oxide
ITO
Logic gates
Nonvolatile memory
Pb(Zr
Random access memory
SrRuO 3
Ti)O 3
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Summary:We have demonstrated nonvolatile memory operation of a ferroelectric-gate thin film transistor (FGT) using solution-processed indium-tin-oxide (ITO) as a channel layer with combination of a PZT/SrRuO 3 /Pt gate stacked structure. A well-defined ITO/PZT interface with atomically flat PZT surface and a negligibly compositional interdiffusion were obtained, which indicate that the use of a SrRuO 3 (SRO) buffer layer between Pt and PZT provides a homogeneous crystal orientation as well as stable perovskite structure for PZT. Furthermore, the fabricated FGT exhibits a high "ON/OFF" current ratio (I ON /I OFF ) of 10 6 and a large memory window of 2.5 V. Such a high current ratio is due to large carrier modulation induced by ferroelectricity of PZT. This device with excellent operation can be a good candidate for nonvolatile memory applications.
ISSN:2159-1660
DOI:10.1109/ICM.2010.5696152