Nanolasers grown on polycrystalline silicon

MOCVD growth of single crystalline GaAs-based nanoneedle/nanopillar lasers on polycrystalline silicon is demonstrated. Superior material quality, high density and light trapping capability make these structures on polysilicon-based substrates attractive for low-cost and high-efficiency photovoltaic...

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Bibliographic Details
Main Authors: Kar Wei Ng, Wai Son Ko, Chen, Roger, Tran, Thai-Truong D, Fanglu Lu, Chuang, Linus C, Sedgwick, Forrest G, Chang-Hasnain, Connie J
Format: Conference Proceeding
Language:English
Subjects:
Nanostructures
Needles
Photovoltaic systems
Silicon
Substrates
Online Access:Request full text
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Summary:MOCVD growth of single crystalline GaAs-based nanoneedle/nanopillar lasers on polycrystalline silicon is demonstrated. Superior material quality, high density and light trapping capability make these structures on polysilicon-based substrates attractive for low-cost and high-efficiency photovoltaic applications.
ISSN:1092-8081
2766-1733
DOI:10.1109/PHOTONICS.2010.5698766