Nanoimprint induced electrical type conversion in HgCdTe

We report supporting evidence that is consistent with p- to n-type conversion of HgCdTe that is induced by surface indentation, as the progress towards the fabrication of photovoltaic infrared detectors by direct imprinting.

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Bibliographic Details
Main Authors: Martyniuk, M, Umana-Membreno, G A, Sewell, R H, Westerhout, R, Musca, C A, Dell, J M, Antoszewski, J, Faraone, L, Macintyre, D S, Thoms, S, Ironside, C N
Format: Conference Proceeding
Language:English
Subjects:
Laser beams
Molecular beam epitaxial growth
Optical surface waves
Semiconductor lasers
Surface treatment
Surface waves
Voltage measurement
Online Access:Request full text
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Description
Summary:We report supporting evidence that is consistent with p- to n-type conversion of HgCdTe that is induced by surface indentation, as the progress towards the fabrication of photovoltaic infrared detectors by direct imprinting.
ISSN:1097-2137
2377-5505
DOI:10.1109/COMMAD.2010.5699723