Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates

GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires...

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Bibliographic Details
Main Authors: Jung-Hyun Kang, Qiang Gao, Joyce, H J, Yong Kim, Yanan Guo, Hongyi Xu, Jin Zou, Fickenscher, M A, Smith, L M, Jackson, H E, Yarrison-Rice, J M, Tan, H H, Jagadish, C
Format: Conference Proceeding
Language:English
Subjects:
Buffer layers
Gallium arsenide
Nanowires
Silicon
Strain
Substrates
Online Access:Request full text
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Summary:GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires.
ISSN:1097-2137
2377-5505
DOI:10.1109/COMMAD.2010.5699778