Voltage polarity effects in GST-based phase change memory: Physical origins and implications

We show that bias polarity can greatly accelerate device failure in GST- based (GeSbTe) PCM devices, and trace this effect to elemental segregation, initially driven by bias across the melt but then enhanced during the crystallization process. Implications include device, pulse, and materials design...

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Bibliographic Details
Main Authors: Padilla, A, Burr, G W, Virwani, K, Debunne, A, Rettner, C T, Topuria, T, Rice, P M, Jackson, B, Dupouy, D, Kellock, A J, Shelby, R M, Gopalakrishnan, K, Shenoy, R S, Kurdi, B N
Format: Conference Proceeding
Language:English
Subjects:
Bridge circuits
Crystallization
Optical pulses
Phase change materials
Resistance
Surface topography
Online Access:Request full text
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Summary:We show that bias polarity can greatly accelerate device failure in GST- based (GeSbTe) PCM devices, and trace this effect to elemental segregation, initially driven by bias across the melt but then enhanced during the crystallization process. Implications include device, pulse, and materials design for high endurance.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2010.5703444