Multiple microscopic defects characterization methods to improve macroscopic degradation modeling of MOSFETs

Degradation modeling is based usually on macroscopic parameters which can yield to wrong conclusions, since similar degradation might result from very different microscopic situations. The focus on degradation modeling at a microscopic level is proposed. Other authors only compare results from diffe...

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Bibliographic Details
Main Authors: Randriamihaja, Y M, Bravaix, A, Huard, V, Rideau, D, Rafik, M, Roy, D
Format: Conference Proceeding
Language:English
Subjects:
Degradation
Energy measurement
Logic gates
Microscopy
MOSFETs
Stress
Stress measurement
Online Access:Request full text
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Summary:Degradation modeling is based usually on macroscopic parameters which can yield to wrong conclusions, since similar degradation might result from very different microscopic situations. The focus on degradation modeling at a microscopic level is proposed. Other authors only compare results from different characterization methods on their common measurement area. This paper proposes to use their complementarities to extend the probed areas. A more accurate determination of defects is obtained with multiple characterization method cross-fertilization allowing 1) ascertaining defect localizations, 2) extending probed areas and 3) identifying microscopic differences between similar macroscopic parameters. The tested devices are NMOS transistors with a 5 nm SiO2 gate oxide and with various gate geometries.
ISSN:1930-8841
2374-8036
DOI:10.1109/IIRW.2010.5706487