Control of spatial distribution of As clusters in LT GaAs by indium delta doping

Two-dimensional precipitation of excess As at In delta-layers has been studied in GaAs grown by molecular beam epitaxy at 200/spl deg/C. We have shown an opportunity to control spatial distribution of As clusters in the matrices uniformly doped with Si donors or Be accepters and undoped as well. The...

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Bibliographic Details
Main Authors: Chaldyshev, V.V., Bert, N.A., Faleev, N.N., Kunitsyn, A.E., Tret'yakov, V.V., Preobrazhenskii, V.V., Putyato, M.A., Semyagin, B.R.
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Electrons
Gallium arsenide
Impurities
Indium
Molecular beam epitaxial growth
Semiconductor device doping
Semiconductor films
Sheet materials
Temperature
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Summary:Two-dimensional precipitation of excess As at In delta-layers has been studied in GaAs grown by molecular beam epitaxy at 200/spl deg/C. We have shown an opportunity to control spatial distribution of As clusters in the matrices uniformly doped with Si donors or Be accepters and undoped as well. The most appropriate conditions for thin and flat cluster sheets have been found and discussed.
DOI:10.1109/SIM.1996.570871