On 1/f trapping noise in MOSTs

New calculations are given for the 1/f noise in metal-oxide-semiconductor transistors (MOSTs) based on the McWhorter model (number fluctuations). Particular attention is paid to two regions of the drain current-voltage characteristic: weak inversion and near saturation. The results are at variance w...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1990-09, Vol.37 (9), p.2084-2089
Main Author: Kleinpenning, T.G.M.
Format: Article
Language:English
Subjects:
Applied sciences
Artificial intelligence
Boundary conditions
Circuit noise
Differential equations
Electric fields
Electron traps
Electronics
Exact sciences and technology
Noise reduction
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Threshold voltage
Transistors
Tunneling
Voltage fluctuations
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Summary:New calculations are given for the 1/f noise in metal-oxide-semiconductor transistors (MOSTs) based on the McWhorter model (number fluctuations). Particular attention is paid to two regions of the drain current-voltage characteristic: weak inversion and near saturation. The results are at variance with previous theories, where some errors have been made. The gravest error was the violation of the physical law whereby the variance of the number of carriers N in the channel is
ISSN:0018-9383
1557-9646
DOI:10.1109/16.57173