Complementary RF LDMOS module for 12 V DC/DC converter and 6 GHz power applications

Addressing applications such as high performance RF power amplifiers and DC/DC converters with high conversion efficiency we demonstrate a cost effective integration of a complementary medium voltage RF LDMOS module in a 0.25 μm base CMOS flow. The integration of the NLDMOS and PLDMOS transistors re...

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Bibliographic Details
Main Authors: Sorge, R, Fischer, A, Mai, A, Schley, P, Schmidt, J, Wipf, Ch, Mausolf, Th, Pliquett, R, Barth, R, Ehwald, K E
Format: Conference Proceeding
Language:English
Subjects:
CMOSFET power amplifiers
DC-DC power conversion
DC-DC power converters
Gain
Logic gates
Performance evaluation
Power amplifiers
Radio frequency
Semiconductor device fabrication
Silicon
Transistors
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Summary:Addressing applications such as high performance RF power amplifiers and DC/DC converters with high conversion efficiency we demonstrate a cost effective integration of a complementary medium voltage RF LDMOS module in a 0.25 μm base CMOS flow. The integration of the NLDMOS and PLDMOS transistors requires just three additional mask steps. The NLDMOS has an excellent large signal RF performance up to 6 GHz. Key RF performance figures at 1 dB gain compression are 20 dB gain, 35 % power added efficiency and 0.4 W/mm power density. First prototypes of fabricated 12 V DC/DC down converters and 6 GHz power amplifiers verify the excellent DC and RF performance of the devices.
DOI:10.1109/SIRF.2011.5719309