Multibit Operation of \hbox -Based ReRAM by Schottky Barrier Height Engineering

We demonstrated multibit operation using a 250-nm Ir/TiO x / TiN resistive random access memory by Schottky barrier height engineering. A Schottky barrier was formed by the interface between a high-work-function Ir top electrode and n-type TiO x . The conducting path, which was composed of oxygen va...

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Bibliographic Details
Published in:IEEE electron device letters 2011-04, Vol.32 (4), p.476-478
Main Authors: Jubong Park, Biju, K P, Seungjae Jung, Wootae Lee, Joonmyoung Lee, Seonghyun Kim, Sangsu Park, Jungho Shin, Hyunsang Hwang
Format: Article
Language:English
Subjects:
Materials
Nonvolatile memory
Resistance
Resistive random access memory (ReRAM)
RRAM
Schottky barrier height modulation
Schottky barriers
Switches
Tin
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Summary:We demonstrated multibit operation using a 250-nm Ir/TiO x / TiN resistive random access memory by Schottky barrier height engineering. A Schottky barrier was formed by the interface between a high-work-function Ir top electrode and n-type TiO x . The conducting path, which was composed of oxygen vacancies, was generated in a low-resistance state, whereas a Schottky barrier was reproduced in a high-resistance state (HRS) due to the high concentration of oxygen by the electric field. By changing the reset operation voltage, we successfully engineered the Schottky barrier height, resulting in the modulation of the HRS current and demonstrating the feasibility of multibit applications.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2109032