Novel designs for high-efficiency millimeter-wave zero-bias detectors

Novel designs for high-efficiency millimeter wave zero-bias detectors are presented. As the renowned backward diodes are extensively exploited in the utilization of zero bias detectors due to its preferable conduction for small reverse biases, the single-handed diode detectors reveal its inherent ca...

Full description

Saved in:
Bibliographic Details
Main Authors: Chun-Yen Huang, Chin-Chung Nien, Chen-Ming Li, Ya-Chung Yu, Li-Yuan Chang, Jenn-Hwan Tarng
Format: Conference Proceeding
Language:English
Subjects:
Detectors
Gallium arsenide
Gallium nitride
Logic gates
Manufacturing
Matched filters
millimeter wave detectors
millimeter wave imaging
Radio frequency
Transconductance
zero-bias
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Novel designs for high-efficiency millimeter wave zero-bias detectors are presented. As the renowned backward diodes are extensively exploited in the utilization of zero bias detectors due to its preferable conduction for small reverse biases, the single-handed diode detectors reveal its inherent capabilities by the semiconductor processes which the detectors are made from. The selected process chiefly dominates the detectors' performances before take any circuit design techniques. Here we present novel designs that employ Schottky diodes in conjunction with field effect transistors (FETs) throughout zero bias condition in 0.15μm GaAs pseudomorphic HEMT (pHEMT) process. Through computational estimations, the novel designs show remarkable results of that the proposed designs surpass the conventional Schottky diode only structures in rectified current levels by four orders, and the isolation of RF-DC also be improved at millimeter wave frequencies.
DOI:10.1109/ICECS.2010.5724560