A highly efficient reconfigurable 130nm CMOS-SOI RF power amplifier for multi-radio emitter

A class E power amplifier (PA) has been designed and simulated for multi-radio applications in the 1.8 to 5GHz frequency band using a 130 nm CMOS-SOI technology. The PA is a single stage, single ended, self-biased cascode formed by a thin oxide transistor as common source device and a laterally diff...

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Main Authors: Andia, L, Belot, D, Villegas, M, Baudoin, G
Format: Conference Proceeding
Language:English
Subjects:
CMOS integrated circuits
Indium gallium arsenide
Logic gates
Power amplifiers
Radio frequency
silicon on insulator technology
switched mode power amplifiers
Transistors
WiMAX
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creator Andia, L
Belot, D
Villegas, M
Baudoin, G
description A class E power amplifier (PA) has been designed and simulated for multi-radio applications in the 1.8 to 5GHz frequency band using a 130 nm CMOS-SOI technology. The PA is a single stage, single ended, self-biased cascode formed by a thin oxide transistor as common source device and a laterally diffused MOS (LDMOS) transistor as common gate. Switched fully integrated high current inductors are used as part of the class E wave shaping network. For the whole frequency band, the PA achieves at least 50% PAE and a gain of more than 14 dB with 6 dBm driving signal.
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The PA is a single stage, single ended, self-biased cascode formed by a thin oxide transistor as common source device and a laterally diffused MOS (LDMOS) transistor as common gate. Switched fully integrated high current inductors are used as part of the class E wave shaping network. 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source IEEE Xplore All Conference Series
subjects CMOS integrated circuits
Indium gallium arsenide
Logic gates
Power amplifiers
Radio frequency
silicon on insulator technology
switched mode power amplifiers
Transistors
WiMAX
title A highly efficient reconfigurable 130nm CMOS-SOI RF power amplifier for multi-radio emitter
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