Self-Aligned Carbon Nanotube Thin-Film Transistors on Flexible Substrates With Novel Source-Drain Contact and Multilayer Metal Interconnection

This paper presents the development and characterization of self-aligned carbon nanotube thin-film transistors (CNT-TFT) on flexible substrates. The channel consisting of dense, aligned, 99% pure semiconducting single-walled CNT is deposited using the dip-coat technique on a sacrificial substrate an...

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Bibliographic Details
Published in:IEEE transactions on nanotechnology 2012-01, Vol.11 (1), p.44-50
Main Authors: Pham, D. T., Subbaraman, H., Chen, M. Y., Xiaochuan Xu, Chen, R. T.
Format: Article
Language:English
Subjects:
Applied sciences
Bend tests
Carbon nanotube (CNT)
Carbon nanotubes
Channels
Contact
Design. Technologies. Operation analysis. Testing
dip-coat technique
Droplets
Electronics
Exact sciences and technology
flexible electronics
Ink
Integrated circuit interconnections
Integrated circuits
Interconnection
Logic gates
Molecular electronics, nanoelectronics
Multilayers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silver
single-walled carbon nanotube (SWCNT)
Substrates
Testing, measurement, noise and reliability
Thin films
thin-film transistor (TFT)
Transistors
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Summary:This paper presents the development and characterization of self-aligned carbon nanotube thin-film transistors (CNT-TFT) on flexible substrates. The channel consisting of dense, aligned, 99% pure semiconducting single-walled CNT is deposited using the dip-coat technique on a sacrificial substrate and then transferred on the device substrate. The source, drain, and gate structures are formed by the ink-jet printing technique. A novel source-drain contact formation using wet droplet of silver ink prior to the CNT thin-film application has been developed to enhance source-drain contact with the CNT channel. Bending test data on CNT-TFT test structures show minimal change (less than 10%) in their performance. Moreover, a special multilayer metal interconnection technology is demonstrated for flexible electronics applications. Bending test data on via test structure show change in resistance by less than 5%.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2011.2130535