Fabrication and characterization at high temperature of AlGaN/GaN enhancement-mode HEMTs

Enhancement-mode (E-mode) high electron mobility transistors (HEMTs) based on a standard AlGaN/GaN heterostructure have been fabricated using two different methods: 19 F implantation and fluorine-based plasma treatment. The need of a thermal annealing after both treatments has been proven in order t...

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Bibliographic Details
Main Authors: Martín-Horcajo, S, Tadjer, M J, Romero, M F, Cuerdo, R, Calle, F
Format: Conference Proceeding
Language:English
Subjects:
annealing
Conferences
drain current
Electron devices
enhancement-mode
HEMT
implantation
plasma treatment
transconductance
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Summary:Enhancement-mode (E-mode) high electron mobility transistors (HEMTs) based on a standard AlGaN/GaN heterostructure have been fabricated using two different methods: 19 F implantation and fluorine-based plasma treatment. The need of a thermal annealing after both treatments has been proven in order to restore the I D and g m levels. DC characterization at high temperature has demonstrated that I D and g m decrease reversibly due to the reduction of the electron mobility and the drift velocity. Pulsed measurements (state period and variable pulse width) have been performed to study the self-heating effects.
ISSN:2163-4971
2643-1300
DOI:10.1109/SCED.2011.5744183