Fabrication and characterization at high temperature of AlGaN/GaN enhancement-mode HEMTs

Enhancement-mode (E-mode) high electron mobility transistors (HEMTs) based on a standard AlGaN/GaN heterostructure have been fabricated using two different methods: 19 F implantation and fluorine-based plasma treatment. The need of a thermal annealing after both treatments has been proven in order t...

Full description

Saved in:
Bibliographic Details
Main Authors: Martín-Horcajo, S, Tadjer, M J, Romero, M F, Cuerdo, R, Calle, F
Format: Conference Proceeding
Language:English
Subjects:
annealing
Conferences
drain current
Electron devices
enhancement-mode
HEMT
implantation
plasma treatment
transconductance
Citations: Items that cite this one
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c138t-ddaaea9926cdd40f7890b802dcd50e8bf836ee435039888bf858d65a0c0d38453
cites
container_end_page 4
container_issue
container_start_page 1
container_title
container_volume
creator Martín-Horcajo, S
Tadjer, M J
Romero, M F
Cuerdo, R
Calle, F
description Enhancement-mode (E-mode) high electron mobility transistors (HEMTs) based on a standard AlGaN/GaN heterostructure have been fabricated using two different methods: 19 F implantation and fluorine-based plasma treatment. The need of a thermal annealing after both treatments has been proven in order to restore the I D and g m levels. DC characterization at high temperature has demonstrated that I D and g m decrease reversibly due to the reduction of the electron mobility and the drift velocity. Pulsed measurements (state period and variable pulse width) have been performed to study the self-heating effects.
doi_str_mv 10.1109/SCED.2011.5744183
format conference_proceeding
fullrecord <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_5744183</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5744183</ieee_id><sourcerecordid>5744183</sourcerecordid><originalsourceid>FETCH-LOGICAL-c138t-ddaaea9926cdd40f7890b802dcd50e8bf836ee435039888bf858d65a0c0d38453</originalsourceid><addsrcrecordid>eNpFkMtOwzAURM1LopR-AGLjH0h6HT_iLKvSB1KBBUViV93YNySoSSvHLMrXU0QlFqPRzJFmMYzdCUiFgGL8Op09pBkIkepcKWHlGbsRKlMqt0bDORtkRslESICLfyDV5REIIxNV5OKajfr-EwAyOO7kZsDe51iGxmFsdh3HznNXY0AXKTTfpzLyuvmoeaR2TwHjVyC-q_hku8Dn8VGcuho7Ry11MWl3nvhy9rTub9lVhdueRicfsrf5bD1dJquXxeN0skqckDYm3iMSFkVmnPcKqtwWUFrIvPMayJaVlYZISQ2ysPY3a-uNRnDgpVVaDtn9325DRJt9aFoMh83pIfkDz89VpA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Fabrication and characterization at high temperature of AlGaN/GaN enhancement-mode HEMTs</title><source>IEEE Xplore All Conference Series</source><creator>Martín-Horcajo, S ; Tadjer, M J ; Romero, M F ; Cuerdo, R ; Calle, F</creator><creatorcontrib>Martín-Horcajo, S ; Tadjer, M J ; Romero, M F ; Cuerdo, R ; Calle, F</creatorcontrib><description>Enhancement-mode (E-mode) high electron mobility transistors (HEMTs) based on a standard AlGaN/GaN heterostructure have been fabricated using two different methods: 19 F implantation and fluorine-based plasma treatment. The need of a thermal annealing after both treatments has been proven in order to restore the I D and g m levels. DC characterization at high temperature has demonstrated that I D and g m decrease reversibly due to the reduction of the electron mobility and the drift velocity. Pulsed measurements (state period and variable pulse width) have been performed to study the self-heating effects.</description><identifier>ISSN: 2163-4971</identifier><identifier>ISBN: 1424478634</identifier><identifier>ISBN: 9781424478637</identifier><identifier>EISSN: 2643-1300</identifier><identifier>EISBN: 1424478650</identifier><identifier>EISBN: 9781424478651</identifier><identifier>EISBN: 1424478642</identifier><identifier>EISBN: 9781424478644</identifier><identifier>DOI: 10.1109/SCED.2011.5744183</identifier><language>eng</language><publisher>IEEE</publisher><subject>annealing ; Conferences ; drain current ; Electron devices ; enhancement-mode ; HEMT ; implantation ; plasma treatment ; transconductance</subject><ispartof>Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, 2011, p.1-4</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c138t-ddaaea9926cdd40f7890b802dcd50e8bf836ee435039888bf858d65a0c0d38453</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5744183$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54555,54920,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5744183$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Martín-Horcajo, S</creatorcontrib><creatorcontrib>Tadjer, M J</creatorcontrib><creatorcontrib>Romero, M F</creatorcontrib><creatorcontrib>Cuerdo, R</creatorcontrib><creatorcontrib>Calle, F</creatorcontrib><title>Fabrication and characterization at high temperature of AlGaN/GaN enhancement-mode HEMTs</title><title>Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011</title><addtitle>SCED</addtitle><description>Enhancement-mode (E-mode) high electron mobility transistors (HEMTs) based on a standard AlGaN/GaN heterostructure have been fabricated using two different methods: 19 F implantation and fluorine-based plasma treatment. The need of a thermal annealing after both treatments has been proven in order to restore the I D and g m levels. DC characterization at high temperature has demonstrated that I D and g m decrease reversibly due to the reduction of the electron mobility and the drift velocity. Pulsed measurements (state period and variable pulse width) have been performed to study the self-heating effects.</description><subject>annealing</subject><subject>Conferences</subject><subject>drain current</subject><subject>Electron devices</subject><subject>enhancement-mode</subject><subject>HEMT</subject><subject>implantation</subject><subject>plasma treatment</subject><subject>transconductance</subject><issn>2163-4971</issn><issn>2643-1300</issn><isbn>1424478634</isbn><isbn>9781424478637</isbn><isbn>1424478650</isbn><isbn>9781424478651</isbn><isbn>1424478642</isbn><isbn>9781424478644</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpFkMtOwzAURM1LopR-AGLjH0h6HT_iLKvSB1KBBUViV93YNySoSSvHLMrXU0QlFqPRzJFmMYzdCUiFgGL8Op09pBkIkepcKWHlGbsRKlMqt0bDORtkRslESICLfyDV5REIIxNV5OKajfr-EwAyOO7kZsDe51iGxmFsdh3HznNXY0AXKTTfpzLyuvmoeaR2TwHjVyC-q_hku8Dn8VGcuho7Ry11MWl3nvhy9rTub9lVhdueRicfsrf5bD1dJquXxeN0skqckDYm3iMSFkVmnPcKqtwWUFrIvPMayJaVlYZISQ2ysPY3a-uNRnDgpVVaDtn9325DRJt9aFoMh83pIfkDz89VpA</recordid><startdate>201102</startdate><enddate>201102</enddate><creator>Martín-Horcajo, S</creator><creator>Tadjer, M J</creator><creator>Romero, M F</creator><creator>Cuerdo, R</creator><creator>Calle, F</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201102</creationdate><title>Fabrication and characterization at high temperature of AlGaN/GaN enhancement-mode HEMTs</title><author>Martín-Horcajo, S ; Tadjer, M J ; Romero, M F ; Cuerdo, R ; Calle, F</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c138t-ddaaea9926cdd40f7890b802dcd50e8bf836ee435039888bf858d65a0c0d38453</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>annealing</topic><topic>Conferences</topic><topic>drain current</topic><topic>Electron devices</topic><topic>enhancement-mode</topic><topic>HEMT</topic><topic>implantation</topic><topic>plasma treatment</topic><topic>transconductance</topic><toplevel>online_resources</toplevel><creatorcontrib>Martín-Horcajo, S</creatorcontrib><creatorcontrib>Tadjer, M J</creatorcontrib><creatorcontrib>Romero, M F</creatorcontrib><creatorcontrib>Cuerdo, R</creatorcontrib><creatorcontrib>Calle, F</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library Online</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Martín-Horcajo, S</au><au>Tadjer, M J</au><au>Romero, M F</au><au>Cuerdo, R</au><au>Calle, F</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Fabrication and characterization at high temperature of AlGaN/GaN enhancement-mode HEMTs</atitle><btitle>Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011</btitle><stitle>SCED</stitle><date>2011-02</date><risdate>2011</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>2163-4971</issn><eissn>2643-1300</eissn><isbn>1424478634</isbn><isbn>9781424478637</isbn><eisbn>1424478650</eisbn><eisbn>9781424478651</eisbn><eisbn>1424478642</eisbn><eisbn>9781424478644</eisbn><abstract>Enhancement-mode (E-mode) high electron mobility transistors (HEMTs) based on a standard AlGaN/GaN heterostructure have been fabricated using two different methods: 19 F implantation and fluorine-based plasma treatment. The need of a thermal annealing after both treatments has been proven in order to restore the I D and g m levels. DC characterization at high temperature has demonstrated that I D and g m decrease reversibly due to the reduction of the electron mobility and the drift velocity. Pulsed measurements (state period and variable pulse width) have been performed to study the self-heating effects.</abstract><pub>IEEE</pub><doi>10.1109/SCED.2011.5744183</doi><tpages>4</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 2163-4971
ispartof Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, 2011, p.1-4
issn 2163-4971
2643-1300
language eng
recordid cdi_ieee_primary_5744183
source IEEE Xplore All Conference Series
subjects annealing
Conferences
drain current
Electron devices
enhancement-mode
HEMT
implantation
plasma treatment
transconductance
title Fabrication and characterization at high temperature of AlGaN/GaN enhancement-mode HEMTs
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T02%3A49%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Fabrication%20and%20characterization%20at%20high%20temperature%20of%20AlGaN/GaN%20enhancement-mode%20HEMTs&rft.btitle=Proceedings%20of%20the%208th%20Spanish%20Conference%20on%20Electron%20Devices,%20CDE'2011&rft.au=Marti%CC%81n-Horcajo,%20S&rft.date=2011-02&rft.spage=1&rft.epage=4&rft.pages=1-4&rft.issn=2163-4971&rft.eissn=2643-1300&rft.isbn=1424478634&rft.isbn_list=9781424478637&rft_id=info:doi/10.1109/SCED.2011.5744183&rft.eisbn=1424478650&rft.eisbn_list=9781424478651&rft.eisbn_list=1424478642&rft.eisbn_list=9781424478644&rft_dat=%3Cieee_CHZPO%3E5744183%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c138t-ddaaea9926cdd40f7890b802dcd50e8bf836ee435039888bf858d65a0c0d38453%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5744183&rfr_iscdi=true