Design and Characterization of Current-Assisted Photonic Demodulators in 0.18- \mu\hbox CMOS Technology

We report on the design of a current-assisted photonic demodulator (CAPD) using standard 0.18-μm complementary metal-oxide-semiconductor technology and its electrooptical characterization. The device can perform both light detection and demodulation in the charge domain, owing to a drift field gener...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2011-06, Vol.58 (6), p.1702-1709
Main Authors: Betta, G D, Donati, S, Hossain, Q D, Martini, G, Pancheri, L, Saguatti, D, Stoppa, D, Verzellesi, G
Format: Article
Language:English
Subjects:
Bandwidth
Complementary metal-oxide-semiconductor (CMOS) optical sensor
Demodulation
Electrodes
fluorescence lifetime imaging
Frequency modulation
Junctions
photonic demodulator
Pixel
time of flight (TOF)
time-resolved photon detection
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Summary:We report on the design of a current-assisted photonic demodulator (CAPD) using standard 0.18-μm complementary metal-oxide-semiconductor technology and its electrooptical characterization. The device can perform both light detection and demodulation in the charge domain, owing to a drift field generated in the silicon substrate by a majority carrier flow. Minimum-sized 10 × 10 μm 2 CAPDs exhibit a direct-current charge-transfer efficiency larger than 80% (corresponding to demodulation contrast larger than 40% under sine-wave modulation) at the modest power consumption of 10 μW and a 3-dB bandwidth of >; 45 MHz. An excellent linearity value with an error lower than 0.11% is obtained in phase measurements. CAPDs with optimized modulation electrode geometries are finally designed, aiming at an improved contrast-versus-power tradeoff.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2011.2126578