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Ultra Thin silicon substrate for next generation technology nodes

Ultra Thin Body Devices are a way to solve technical challenges requested by advanced digital technology nodes. Combined with planar CMOS approach, they lead to the need for Ultra-Thin SOI (UTSOI) wafers. These 300 mm ultra-thin SOI layer are now available with silicon target thickness at 12 nm, con...

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Bibliographic Details
Main Authors: Schwarzenbach, W, Cauchy, X, Bonnin, O, Boedt, F, Butaud, E, Moulin, C, Kerdiles, S, Gilbert, J.-F, Daval, N, Aulnette, C, Girard, C, Yoshimi, M, Maleville, C
Format: Conference Proceeding
Language:English
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Summary:Ultra Thin Body Devices are a way to solve technical challenges requested by advanced digital technology nodes. Combined with planar CMOS approach, they lead to the need for Ultra-Thin SOI (UTSOI) wafers. These 300 mm ultra-thin SOI layer are now available with silicon target thickness at 12 nm, controlled within a few angström range from Wafer to Wafer to Transistor level.Ultra-Thin SOI & BOX (UTBOX) substrates with 25 to 10 nm BOX are developed in parallel to UTSOI and will show similar SOI layer uniformity.
ISSN:1523-553X