On the stability of the DC and RF gain of GaInP/GaAs HBTs

In the present work the reliability of Carbon-doped GaInP/GaAs HBTs is evaluated by means of a current stress performed at room temperature. The impact of the stress on DC and RF characteristics and low frequency noise is reported, and a correlation between DC, RF, and noise variations is demonstrat...

Full description

Saved in:
Bibliographic Details
Main Authors: Borgarino, M., Plana, R., Tartarin, J.G., Delage, S., Blanck, H., Fantini, F., Graffeuil, J.
Format: Conference Proceeding
Language:English
Subjects:
Gallium arsenide
Hydrogen
Low-frequency noise
Passivation
Performance evaluation
Radio frequency
Semiconductor device noise
Stability
Stress
Temperature
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In the present work the reliability of Carbon-doped GaInP/GaAs HBTs is evaluated by means of a current stress performed at room temperature. The impact of the stress on DC and RF characteristics and low frequency noise is reported, and a correlation between DC, RF, and noise variations is demonstrated. The effects observed are explained in terms of Carbon passivation by Hydrogen atoms released from passivation/semiconductor interface during the stress.
DOI:10.1109/EDMO.1996.575794