AC analysis of defect cross sections using non-radiative MPA quantum model

A multiphonon-assisted model included in a Poisson-Schroedinger solver has been applied for the calculation of the capture/emission trapping rates of Si/SiO 2 interface defects and their dependence with respect to the trap energy and depth in the oxide. The accurate trap cross-sections extracted wit...

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Bibliographic Details
Main Authors: Garetto, D, Randriamihaja, Y M, Zaka, A, Rideau, D, Schmid, A, Jaouem, Hervé, Leblebici, Y
Format: Conference Proceeding
Language:English
Subjects:
AC analysis
Biological system modeling
Capacitance
Charge carrier processes
Frequency measurement
Logic gates
multiphonon trapping model
Reservoirs
Silicon
trap cross-section
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Summary:A multiphonon-assisted model included in a Poisson-Schroedinger solver has been applied for the calculation of the capture/emission trapping rates of Si/SiO 2 interface defects and their dependence with respect to the trap energy and depth in the oxide. The accurate trap cross-sections extracted with this approach permit compact modeling engineers to evaluate the accuracy of constant cross-section models. The model has been applied to extract the trap concentration and frequency response, comparing AC simulations with measurements.
DOI:10.1109/ULIS.2011.5757973