Loading…

Electrothermal prediction model of Cu low k interconnection on glass substrate

The aim of this work is to determine a joule heating prediction model for thick copper/Low-k interconnects on glass substrate technology. Experiments and simulations have been used to define thermal conductivities of our stack material from thermal resistance study. In a second time, the thermal res...

Full description

Saved in:
Bibliographic Details
Main Authors: Siegert, L, Fiannaca, G, Roqueta, F, Gautier, G, Anceau, C
Format: Conference Proceeding
Language:English
Subjects:
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 5/5
container_issue
container_start_page 1/5
container_title
container_volume
creator Siegert, L
Fiannaca, G
Roqueta, F
Gautier, G
Anceau, C
description The aim of this work is to determine a joule heating prediction model for thick copper/Low-k interconnects on glass substrate technology. Experiments and simulations have been used to define thermal conductivities of our stack material from thermal resistance study. In a second time, the thermal resistance is used as quantitative response to predict the joule temperature in the strip. The experimental R thermic results are well fit with a quadratic model which combined with the thermal coefficient of resistance formalism; allow us to define an analytical temperature joule heating formula. This methodology to define an analytical joule heating formula can be widely used to determine the maximum operating conditions and can be implemented in design rules manuals.
doi_str_mv 10.1109/ESIME.2011.5765765
format conference_proceeding
fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5765765</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5765765</ieee_id><sourcerecordid>5765765</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-c5eef579b3d0d82d050cb99fd566ca2942c2b2895be4dd5c9a56819017bf3d7f3</originalsourceid><addsrcrecordid>eNo1kM9KxDAYxCMiqGtfQC95gdYvaZM0RynVXVj14N6XNPmi1f5Zkizi27uy6_CDYWCYwxByy6BgDPR9-7Z6bgsOjBVCyT_OSKZVzSqhFDAQ1Tm5_g-qvCRZjJ9wkJRa1nBFXtoBbQpz-sAwmoHuArrepn6e6Dg7HOjsabOnw_xNv2g_JQx2niY8Ng68DyZGGvddTMEkvCEX3gwRs5MvyOax3TTLfP36tGoe1nmvIeVWIHqhdFc6cDV3IMB2WnsnpLSG64pb3vFaiw4r54TVRsiaaWCq86VTvlyQu-Nsj4jbXehHE362pwfKXzkLUJ0</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Electrothermal prediction model of Cu low k interconnection on glass substrate</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Siegert, L ; Fiannaca, G ; Roqueta, F ; Gautier, G ; Anceau, C</creator><creatorcontrib>Siegert, L ; Fiannaca, G ; Roqueta, F ; Gautier, G ; Anceau, C</creatorcontrib><description>The aim of this work is to determine a joule heating prediction model for thick copper/Low-k interconnects on glass substrate technology. Experiments and simulations have been used to define thermal conductivities of our stack material from thermal resistance study. In a second time, the thermal resistance is used as quantitative response to predict the joule temperature in the strip. The experimental R thermic results are well fit with a quadratic model which combined with the thermal coefficient of resistance formalism; allow us to define an analytical temperature joule heating formula. This methodology to define an analytical joule heating formula can be widely used to determine the maximum operating conditions and can be implemented in design rules manuals.</description><identifier>ISBN: 1457701073</identifier><identifier>ISBN: 9781457701078</identifier><identifier>EISBN: 9781457701054</identifier><identifier>EISBN: 9781457701061</identifier><identifier>EISBN: 1457701065</identifier><identifier>EISBN: 1457701057</identifier><identifier>DOI: 10.1109/ESIME.2011.5765765</identifier><language>eng</language><publisher>IEEE</publisher><subject>Calibration ; Copper ; Equations ; Heating ; Mathematical model ; Physics ; Strips</subject><ispartof>2011 12th Intl. Conf. on Thermal, Mechanical &amp; Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, 2011, p.1/5-5/5</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5765765$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5765765$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Siegert, L</creatorcontrib><creatorcontrib>Fiannaca, G</creatorcontrib><creatorcontrib>Roqueta, F</creatorcontrib><creatorcontrib>Gautier, G</creatorcontrib><creatorcontrib>Anceau, C</creatorcontrib><title>Electrothermal prediction model of Cu low k interconnection on glass substrate</title><title>2011 12th Intl. Conf. on Thermal, Mechanical &amp; Multi-Physics Simulation and Experiments in Microelectronics and Microsystems</title><addtitle>ESIME</addtitle><description>The aim of this work is to determine a joule heating prediction model for thick copper/Low-k interconnects on glass substrate technology. Experiments and simulations have been used to define thermal conductivities of our stack material from thermal resistance study. In a second time, the thermal resistance is used as quantitative response to predict the joule temperature in the strip. The experimental R thermic results are well fit with a quadratic model which combined with the thermal coefficient of resistance formalism; allow us to define an analytical temperature joule heating formula. This methodology to define an analytical joule heating formula can be widely used to determine the maximum operating conditions and can be implemented in design rules manuals.</description><subject>Calibration</subject><subject>Copper</subject><subject>Equations</subject><subject>Heating</subject><subject>Mathematical model</subject><subject>Physics</subject><subject>Strips</subject><isbn>1457701073</isbn><isbn>9781457701078</isbn><isbn>9781457701054</isbn><isbn>9781457701061</isbn><isbn>1457701065</isbn><isbn>1457701057</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNo1kM9KxDAYxCMiqGtfQC95gdYvaZM0RynVXVj14N6XNPmi1f5Zkizi27uy6_CDYWCYwxByy6BgDPR9-7Z6bgsOjBVCyT_OSKZVzSqhFDAQ1Tm5_g-qvCRZjJ9wkJRa1nBFXtoBbQpz-sAwmoHuArrepn6e6Dg7HOjsabOnw_xNv2g_JQx2niY8Ng68DyZGGvddTMEkvCEX3gwRs5MvyOax3TTLfP36tGoe1nmvIeVWIHqhdFc6cDV3IMB2WnsnpLSG64pb3vFaiw4r54TVRsiaaWCq86VTvlyQu-Nsj4jbXehHE362pwfKXzkLUJ0</recordid><startdate>201104</startdate><enddate>201104</enddate><creator>Siegert, L</creator><creator>Fiannaca, G</creator><creator>Roqueta, F</creator><creator>Gautier, G</creator><creator>Anceau, C</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201104</creationdate><title>Electrothermal prediction model of Cu low k interconnection on glass substrate</title><author>Siegert, L ; Fiannaca, G ; Roqueta, F ; Gautier, G ; Anceau, C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-c5eef579b3d0d82d050cb99fd566ca2942c2b2895be4dd5c9a56819017bf3d7f3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Calibration</topic><topic>Copper</topic><topic>Equations</topic><topic>Heating</topic><topic>Mathematical model</topic><topic>Physics</topic><topic>Strips</topic><toplevel>online_resources</toplevel><creatorcontrib>Siegert, L</creatorcontrib><creatorcontrib>Fiannaca, G</creatorcontrib><creatorcontrib>Roqueta, F</creatorcontrib><creatorcontrib>Gautier, G</creatorcontrib><creatorcontrib>Anceau, C</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Siegert, L</au><au>Fiannaca, G</au><au>Roqueta, F</au><au>Gautier, G</au><au>Anceau, C</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Electrothermal prediction model of Cu low k interconnection on glass substrate</atitle><btitle>2011 12th Intl. Conf. on Thermal, Mechanical &amp; Multi-Physics Simulation and Experiments in Microelectronics and Microsystems</btitle><stitle>ESIME</stitle><date>2011-04</date><risdate>2011</risdate><spage>1/5</spage><epage>5/5</epage><pages>1/5-5/5</pages><isbn>1457701073</isbn><isbn>9781457701078</isbn><eisbn>9781457701054</eisbn><eisbn>9781457701061</eisbn><eisbn>1457701065</eisbn><eisbn>1457701057</eisbn><abstract>The aim of this work is to determine a joule heating prediction model for thick copper/Low-k interconnects on glass substrate technology. Experiments and simulations have been used to define thermal conductivities of our stack material from thermal resistance study. In a second time, the thermal resistance is used as quantitative response to predict the joule temperature in the strip. The experimental R thermic results are well fit with a quadratic model which combined with the thermal coefficient of resistance formalism; allow us to define an analytical temperature joule heating formula. This methodology to define an analytical joule heating formula can be widely used to determine the maximum operating conditions and can be implemented in design rules manuals.</abstract><pub>IEEE</pub><doi>10.1109/ESIME.2011.5765765</doi></addata></record>
fulltext fulltext_linktorsrc
identifier ISBN: 1457701073
ispartof 2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, 2011, p.1/5-5/5
issn
language eng
recordid cdi_ieee_primary_5765765
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Calibration
Copper
Equations
Heating
Mathematical model
Physics
Strips
title Electrothermal prediction model of Cu low k interconnection on glass substrate
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T10%3A04%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Electrothermal%20prediction%20model%20of%20Cu%20low%20k%20interconnection%20on%20glass%20substrate&rft.btitle=2011%2012th%20Intl.%20Conf.%20on%20Thermal,%20Mechanical%20&%20Multi-Physics%20Simulation%20and%20Experiments%20in%20Microelectronics%20and%20Microsystems&rft.au=Siegert,%20L&rft.date=2011-04&rft.spage=1/5&rft.epage=5/5&rft.pages=1/5-5/5&rft.isbn=1457701073&rft.isbn_list=9781457701078&rft_id=info:doi/10.1109/ESIME.2011.5765765&rft.eisbn=9781457701054&rft.eisbn_list=9781457701061&rft.eisbn_list=1457701065&rft.eisbn_list=1457701057&rft_dat=%3Cieee_6IE%3E5765765%3C/ieee_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i90t-c5eef579b3d0d82d050cb99fd566ca2942c2b2895be4dd5c9a56819017bf3d7f3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5765765&rfr_iscdi=true