A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency Reference for Wireless Sensor Networks

A temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55°C to 125°C , the frequency spread of the complete reference is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. Th...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2011-07, Vol.46 (7), p.1544-1552
Main Authors: Sebastiano, F., Breems, L. J., Makinwa, K. A. A., Drago, S., Leenaerts, D. M. W., Nauta, B.
Format: Article
Language:English
Subjects:
Accuracy
Charge carrier mobility
Circuits
CMOS
CMOS integrated circuits
crystal-less clock
Electron mobility
Frequency conversion
frequency reference
low voltage
Metal oxide semiconductors
MOSFET
Networks
Oscillators
Sensors
sigma-delta modulation
smart sensors
Spreads
Temperature
temperature compensation
Temperature measurement
Temperature sensors
ultra-low power
Wireless communication
Wireless sensor networks
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Summary:A temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55°C to 125°C , the frequency spread of the complete reference is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm 2 and draws 42.6 μA from a 1.2-V supply at room temperature.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2011.2143630