Design and modeling method of package for power GaN HEMTs to limit the input matching sensitivity

This paper proposes a packaged transistor modeling using lumped elements. This model allows studying the input impedance dispersion when a range of variation is applied to various package components. This dispersion is also highlighted when a load impedance variation is applied to the package transi...

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Bibliographic Details
Main Authors: Cheron, J, Campovecchio, M, Barataud, D, Reveyrand, T, Mons, S, Stanislawiak, M, Eudeline, P, Floriot, D, Demenitroux, W
Format: Conference Proceeding
Language:English
Subjects:
Dispersion
GaN HEMT
Impedance
Integrated circuit modeling
Load modeling
load-pull measurements
Loss measurement
Packaged transistor modeling
power amplifiers
pre-matching
Transistors
Wires
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Summary:This paper proposes a packaged transistor modeling using lumped elements. This model allows studying the input impedance dispersion when a range of variation is applied to various package components. This dispersion is also highlighted when a load impedance variation is applied to the package transistor. It is demonstrated that this dispersion can be corrected using a specific input pre-matching and by having a very good information about input return loss contours. Moreover, this specific packaged transistor presents input impedance close to 50Ω over [3.0-3.8]GHz.
DOI:10.1109/INMMIC.2011.5773327