Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System

We have fabricated and characterized ultrafast metal-semiconductor-metal (MSM) photodetectors integrated with metal-semiconductor-field-effect-transistors (MESFETs) integrated in coplanar strip lines in the GaN/AlN/SiC material system. We recorded electrical transients of the single photodetector as...

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Bibliographic Details
Published in:IEEE photonics technology letters 2011-09, Vol.23 (17), p.1189-1191
Main Authors: Mikulics, M., Kordos, P., Gregusova, D., Adam, R., Kocan, M., Shuai Wu, Zhang, J., Sobolewski, R., Grutzmacher, D., Marso, M.
Format: Article
Language:English
Subjects:
Gallium nitride
Gallium nitride (GaN)
Logic gates
Materials
MESFETs
metal-semiconductor-field-effect-transistor (MESFET)
metal-semiconductor-metal photodetector (MSM PD)
Photodetectors
terahertz (THz)
Transient analysis
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Summary:We have fabricated and characterized ultrafast metal-semiconductor-metal (MSM) photodetectors integrated with metal-semiconductor-field-effect-transistors (MESFETs) integrated in coplanar strip lines in the GaN/AlN/SiC material system. We recorded electrical transients of the single photodetector as short as 0.9 ps wide by optoelectric pump-probe measurements using 360-nm-wavelength and 100-fs-duration laser pulses. Electric photoresponse transients of the photodetector with 6-mV peak amplitude were amplified by the MESFET, resulting in 4-ps-wide and 35-mV peak amplitude signals. This monolithically integrated optoelectronic circuit is presented as a potential candidate for high-speed ultraviolet optoelectronics.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2011.2157816