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Monolithically integrated detector chip for a two-channel unidirectional WDM link at 1.5 mu m
The fabrication and operation of a monolithically integrated InGaASP/InP wavelength division multiplexing (WDM) detector chip is reported. It consists of a Y-branch grating demultiplexer and two p-i-n photodiodes. Polarization-independent operation for two closely spaced channels ( Delta lambda =3.6...
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Published in: | IEEE journal on selected areas in communications 1990-08, Vol.8 (6), p.1183-1189 |
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Main Authors: | , , , , , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The fabrication and operation of a monolithically integrated InGaASP/InP wavelength division multiplexing (WDM) detector chip is reported. It consists of a Y-branch grating demultiplexer and two p-i-n photodiodes. Polarization-independent operation for two closely spaced channels ( Delta lambda =3.6 nm) at lambda =1.5 mu m was obtained. In polarization-independent operation, 1.3-mm-long Bragg gratings on buried waveguides showed a peak crosstalk attenuation of 15 dB and a stop bandwidth of 0.2 nm at -10 dB. These values show the high potential of Bragg grating devices for dense wavelength division multiplexing applications. The static electrical properties of the monolithically integrated p-i-n photodiodes (dark current of 2-5 nA at -10 V, breakdown voltage of 45-65 at a 10 mu A leakage current) approach the values obtained for discrete devices. The bandwidth of 420 MHz enables operation in the 600-Mbaud region. The external quantum efficiency of the complete detector chip ( eta =0.08) is still rather small. However, it could be considered sufficient for the operation of such devices in local networks with distances of a few kilometers.< > |
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ISSN: | 0733-8716 1558-0008 |
DOI: | 10.1109/49.57825 |