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Monolithically integrated detector chip for a two-channel unidirectional WDM link at 1.5 mu m
The fabrication and operation of a monolithically integrated InGaASP/InP wavelength division multiplexing (WDM) detector chip is reported. It consists of a Y-branch grating demultiplexer and two p-i-n photodiodes. Polarization-independent operation for two closely spaced channels ( Delta lambda =3.6...
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Published in: | IEEE journal on selected areas in communications 1990-08, Vol.8 (6), p.1183-1189 |
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creator | Winzer, G. Doldissen, W. Cremer, C. Fiedler, F. Heise, G. Kaiser, R. Marz, R. Mahlein, H.F. Morl, L. Nolting, H.-P.J. Rehbein, W. Schienle, M. Schulte-Roth, G. Unterborsch, G. Unzeitig, H. Wolff, U. |
description | The fabrication and operation of a monolithically integrated InGaASP/InP wavelength division multiplexing (WDM) detector chip is reported. It consists of a Y-branch grating demultiplexer and two p-i-n photodiodes. Polarization-independent operation for two closely spaced channels ( Delta lambda =3.6 nm) at lambda =1.5 mu m was obtained. In polarization-independent operation, 1.3-mm-long Bragg gratings on buried waveguides showed a peak crosstalk attenuation of 15 dB and a stop bandwidth of 0.2 nm at -10 dB. These values show the high potential of Bragg grating devices for dense wavelength division multiplexing applications. The static electrical properties of the monolithically integrated p-i-n photodiodes (dark current of 2-5 nA at -10 V, breakdown voltage of 45-65 at a 10 mu A leakage current) approach the values obtained for discrete devices. The bandwidth of 420 MHz enables operation in the 600-Mbaud region. The external quantum efficiency of the complete detector chip ( eta =0.08) is still rather small. However, it could be considered sufficient for the operation of such devices in local networks with distances of a few kilometers.< > |
doi_str_mv | 10.1109/49.57825 |
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It consists of a Y-branch grating demultiplexer and two p-i-n photodiodes. Polarization-independent operation for two closely spaced channels ( Delta lambda =3.6 nm) at lambda =1.5 mu m was obtained. In polarization-independent operation, 1.3-mm-long Bragg gratings on buried waveguides showed a peak crosstalk attenuation of 15 dB and a stop bandwidth of 0.2 nm at -10 dB. These values show the high potential of Bragg grating devices for dense wavelength division multiplexing applications. The static electrical properties of the monolithically integrated p-i-n photodiodes (dark current of 2-5 nA at -10 V, breakdown voltage of 45-65 at a 10 mu A leakage current) approach the values obtained for discrete devices. The bandwidth of 420 MHz enables operation in the 600-Mbaud region. The external quantum efficiency of the complete detector chip ( eta =0.08) is still rather small. However, it could be considered sufficient for the operation of such devices in local networks with distances of a few kilometers.< ></description><identifier>ISSN: 0733-8716</identifier><identifier>EISSN: 1558-0008</identifier><identifier>DOI: 10.1109/49.57825</identifier><identifier>CODEN: ISACEM</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Attenuation ; Bandwidth ; Bragg gratings ; Crosstalk ; Detectors ; Exact sciences and technology ; Fabrication ; Indium phosphide ; PIN photodiodes ; Polarization ; Systems, networks and services of telecommunications ; Telecommunications ; Telecommunications and information theory ; Transmission and modulation (techniques and equipments) ; Wavelength division multiplexing</subject><ispartof>IEEE journal on selected areas in communications, 1990-08, Vol.8 (6), p.1183-1189</ispartof><rights>1991 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c188t-76f299757d2624f3131195e5675134016081bf54e5b64ec46d66214ae46316c33</citedby><cites>FETCH-LOGICAL-c188t-76f299757d2624f3131195e5675134016081bf54e5b64ec46d66214ae46316c33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/57825$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=19322594$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Winzer, G.</creatorcontrib><creatorcontrib>Doldissen, W.</creatorcontrib><creatorcontrib>Cremer, C.</creatorcontrib><creatorcontrib>Fiedler, F.</creatorcontrib><creatorcontrib>Heise, G.</creatorcontrib><creatorcontrib>Kaiser, R.</creatorcontrib><creatorcontrib>Marz, R.</creatorcontrib><creatorcontrib>Mahlein, H.F.</creatorcontrib><creatorcontrib>Morl, L.</creatorcontrib><creatorcontrib>Nolting, H.-P.J.</creatorcontrib><creatorcontrib>Rehbein, W.</creatorcontrib><creatorcontrib>Schienle, M.</creatorcontrib><creatorcontrib>Schulte-Roth, G.</creatorcontrib><creatorcontrib>Unterborsch, G.</creatorcontrib><creatorcontrib>Unzeitig, H.</creatorcontrib><creatorcontrib>Wolff, U.</creatorcontrib><title>Monolithically integrated detector chip for a two-channel unidirectional WDM link at 1.5 mu m</title><title>IEEE journal on selected areas in communications</title><addtitle>J-SAC</addtitle><description>The fabrication and operation of a monolithically integrated InGaASP/InP wavelength division multiplexing (WDM) detector chip is reported. It consists of a Y-branch grating demultiplexer and two p-i-n photodiodes. Polarization-independent operation for two closely spaced channels ( Delta lambda =3.6 nm) at lambda =1.5 mu m was obtained. In polarization-independent operation, 1.3-mm-long Bragg gratings on buried waveguides showed a peak crosstalk attenuation of 15 dB and a stop bandwidth of 0.2 nm at -10 dB. These values show the high potential of Bragg grating devices for dense wavelength division multiplexing applications. The static electrical properties of the monolithically integrated p-i-n photodiodes (dark current of 2-5 nA at -10 V, breakdown voltage of 45-65 at a 10 mu A leakage current) approach the values obtained for discrete devices. The bandwidth of 420 MHz enables operation in the 600-Mbaud region. The external quantum efficiency of the complete detector chip ( eta =0.08) is still rather small. However, it could be considered sufficient for the operation of such devices in local networks with distances of a few kilometers.< ></description><subject>Applied sciences</subject><subject>Attenuation</subject><subject>Bandwidth</subject><subject>Bragg gratings</subject><subject>Crosstalk</subject><subject>Detectors</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Indium phosphide</subject><subject>PIN photodiodes</subject><subject>Polarization</subject><subject>Systems, networks and services of telecommunications</subject><subject>Telecommunications</subject><subject>Telecommunications and information theory</subject><subject>Transmission and modulation (techniques and equipments)</subject><subject>Wavelength division multiplexing</subject><issn>0733-8716</issn><issn>1558-0008</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNpF0E1LAzEQBuAgCtYqePWWi-BlayZfmxylfkKLF8WTLGk2a6NpdsmmSP-9qyt6moF5eGFehE6BzACIvuR6JkpFxR6agBCqIISofTQhJWOFKkEeoqO-fycEOFd0gl6XbWyDz2tvTQg77GN2b8lkV-PaZWdzm7Bd-w43w2Jw_mwLuzYxuoC30dc-DcS30QT8cr3EwccPbDKGmcCbLd4co4PGhN6d_M4per69eZrfF4vHu4f51aKwoFQuStlQrUtR1lRS3jBgAFo4IUsBjBOQRMGqEdyJleTOcllLSYEbxyUDaRmboosx16a275Nrqi75jUm7Ckj1XUvFdfVTy0DPR9qZfni5SSZa3_97zSgVmg_ubHTeOfd3HjO-AAUUZ6g</recordid><startdate>199008</startdate><enddate>199008</enddate><creator>Winzer, G.</creator><creator>Doldissen, W.</creator><creator>Cremer, C.</creator><creator>Fiedler, F.</creator><creator>Heise, G.</creator><creator>Kaiser, R.</creator><creator>Marz, R.</creator><creator>Mahlein, H.F.</creator><creator>Morl, L.</creator><creator>Nolting, H.-P.J.</creator><creator>Rehbein, W.</creator><creator>Schienle, M.</creator><creator>Schulte-Roth, G.</creator><creator>Unterborsch, G.</creator><creator>Unzeitig, H.</creator><creator>Wolff, U.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>199008</creationdate><title>Monolithically integrated detector chip for a two-channel unidirectional WDM link at 1.5 mu m</title><author>Winzer, G. ; Doldissen, W. ; Cremer, C. ; Fiedler, F. ; Heise, G. ; Kaiser, R. ; Marz, R. ; Mahlein, H.F. ; Morl, L. ; Nolting, H.-P.J. ; Rehbein, W. ; Schienle, M. ; Schulte-Roth, G. ; Unterborsch, G. ; Unzeitig, H. ; Wolff, U.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c188t-76f299757d2624f3131195e5675134016081bf54e5b64ec46d66214ae46316c33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Applied sciences</topic><topic>Attenuation</topic><topic>Bandwidth</topic><topic>Bragg gratings</topic><topic>Crosstalk</topic><topic>Detectors</topic><topic>Exact sciences and technology</topic><topic>Fabrication</topic><topic>Indium phosphide</topic><topic>PIN photodiodes</topic><topic>Polarization</topic><topic>Systems, networks and services of telecommunications</topic><topic>Telecommunications</topic><topic>Telecommunications and information theory</topic><topic>Transmission and modulation (techniques and equipments)</topic><topic>Wavelength division multiplexing</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Winzer, G.</creatorcontrib><creatorcontrib>Doldissen, W.</creatorcontrib><creatorcontrib>Cremer, C.</creatorcontrib><creatorcontrib>Fiedler, F.</creatorcontrib><creatorcontrib>Heise, G.</creatorcontrib><creatorcontrib>Kaiser, R.</creatorcontrib><creatorcontrib>Marz, R.</creatorcontrib><creatorcontrib>Mahlein, H.F.</creatorcontrib><creatorcontrib>Morl, L.</creatorcontrib><creatorcontrib>Nolting, H.-P.J.</creatorcontrib><creatorcontrib>Rehbein, W.</creatorcontrib><creatorcontrib>Schienle, M.</creatorcontrib><creatorcontrib>Schulte-Roth, G.</creatorcontrib><creatorcontrib>Unterborsch, G.</creatorcontrib><creatorcontrib>Unzeitig, H.</creatorcontrib><creatorcontrib>Wolff, U.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>IEEE journal on selected areas in communications</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Winzer, G.</au><au>Doldissen, W.</au><au>Cremer, C.</au><au>Fiedler, F.</au><au>Heise, G.</au><au>Kaiser, R.</au><au>Marz, R.</au><au>Mahlein, H.F.</au><au>Morl, L.</au><au>Nolting, H.-P.J.</au><au>Rehbein, W.</au><au>Schienle, M.</au><au>Schulte-Roth, G.</au><au>Unterborsch, G.</au><au>Unzeitig, H.</au><au>Wolff, U.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Monolithically integrated detector chip for a two-channel unidirectional WDM link at 1.5 mu m</atitle><jtitle>IEEE journal on selected areas in communications</jtitle><stitle>J-SAC</stitle><date>1990-08</date><risdate>1990</risdate><volume>8</volume><issue>6</issue><spage>1183</spage><epage>1189</epage><pages>1183-1189</pages><issn>0733-8716</issn><eissn>1558-0008</eissn><coden>ISACEM</coden><abstract>The fabrication and operation of a monolithically integrated InGaASP/InP wavelength division multiplexing (WDM) detector chip is reported. It consists of a Y-branch grating demultiplexer and two p-i-n photodiodes. Polarization-independent operation for two closely spaced channels ( Delta lambda =3.6 nm) at lambda =1.5 mu m was obtained. In polarization-independent operation, 1.3-mm-long Bragg gratings on buried waveguides showed a peak crosstalk attenuation of 15 dB and a stop bandwidth of 0.2 nm at -10 dB. These values show the high potential of Bragg grating devices for dense wavelength division multiplexing applications. The static electrical properties of the monolithically integrated p-i-n photodiodes (dark current of 2-5 nA at -10 V, breakdown voltage of 45-65 at a 10 mu A leakage current) approach the values obtained for discrete devices. The bandwidth of 420 MHz enables operation in the 600-Mbaud region. The external quantum efficiency of the complete detector chip ( eta =0.08) is still rather small. However, it could be considered sufficient for the operation of such devices in local networks with distances of a few kilometers.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/49.57825</doi><tpages>7</tpages></addata></record> |
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subjects | Applied sciences Attenuation Bandwidth Bragg gratings Crosstalk Detectors Exact sciences and technology Fabrication Indium phosphide PIN photodiodes Polarization Systems, networks and services of telecommunications Telecommunications Telecommunications and information theory Transmission and modulation (techniques and equipments) Wavelength division multiplexing |
title | Monolithically integrated detector chip for a two-channel unidirectional WDM link at 1.5 mu m |
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