A 122-GHz SiGe-Based Signal-Generation Chip Employing a Fundamental-Wave Oscillator With Capacitive Feedback Frequency-Enhancement

This paper presents a highly integrated and fully balanced signal generation block comprising a fundamental-wave voltage-controlled oscillator (VCO), an output buffer, and a configurable frequency divider stage (prescaler). The VCO introduces a negative resistance structure in conjunction with capac...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2011-09, Vol.46 (9), p.2009-2020
Main Authors: Jahn, M., Knapp, H., Stelzer, A.
Format: Article
Language:English
Subjects:
Applied sciences
Chip formation
Chips
Circuit properties
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Feedback
Heterojunction bipolar transistors (HBTs)
Impedance
Integrated circuits
millimeter wave circuits
MIMICs
Oscillations
Oscillators
Oscillators, resonators, synthetizers
regenerative frequency divider
Resistance
Resonant frequency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SiGe bipolar ICs
Signal convertors
Signal generation
Silicon germanides
Studies
Transistors
Tuning
Voltage-controlled oscillators
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Summary:This paper presents a highly integrated and fully balanced signal generation block comprising a fundamental-wave voltage-controlled oscillator (VCO), an output buffer, and a configurable frequency divider stage (prescaler). The VCO introduces a negative resistance structure in conjunction with capacitive cross-coupling. This compound structure allows fundamental oscillation to be sustained at high frequencies while providing wide tuning ranges. The capabilities of the capacitive feedback were analyzed using a linear transistor model, and boundary conditions, which support the early design phase, were derived. The chip was fabricated in a SiGe technology with 300-GHz f max HBTs. The output frequency of the monolithic microwave integrated circuit is centered at 122 GHz and provides a tuning range of 16 GHz at an average single-sideband phase noise of -95 dBc/Hz at 1 MHz offset frequency. Possible applications include ISM applications at 122 GHz and short-range radar systems with wide tuning ranges.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2011.2145310