Formation of highly reliable Cu/low-k interconnects by using CVD Co barrier in dual damascene structures

CVD Co film was investigated as an alternative barrier layer to the conventional PVD TaN\Ta in V1\M2 structure for 32 nm node. We improved via filling performance and upstream (V1→M2) electromigration (EM) lifetime by more than three times. Excellent step coverage of CVD barrier makes it possible to...

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Bibliographic Details
Main Authors: Hye Kyung Jung, Hyun-Bae Lee, Tsukasa, Matsuda, Jung, Eunji, Jong-Ho Yun, Jong Myeong Lee, Gil-Heyun Choi, Siyoung Choi, Chilhee Chung
Format: Conference Proceeding
Language:English
Subjects:
BEOL
Copper
CVD
Dual Damascene
Electromigration
Electromigration (EM)
Failure analysis
Filling
Reliability
Resistance
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Summary:CVD Co film was investigated as an alternative barrier layer to the conventional PVD TaN\Ta in V1\M2 structure for 32 nm node. We improved via filling performance and upstream (V1→M2) electromigration (EM) lifetime by more than three times. Excellent step coverage of CVD barrier makes it possible to reduce the thickness of the barrier metal by 30% and to increase the volume of Cu in metal lines. RC delay also reduced with decrease in resistance. Since adhesion at the interface between the barrier-Co and Cu also is strong, migration of Cu atoms is dramatically slowed down. EM in the via is finally deterred due to absence of pre-existing voids, consequently lifetime increases. This CVD Co process is expected to be beneficial for the next technology generation beyond 20 nm node.
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2011.5784492