Reliability-limiting defects in AlGaN/GaN HEMTs

Low-frequency noise measurements and density functional theory calculations are combined to show that N-anti-site and C impurity defects can lead to changes in the low frequency noise of GaN/AlGaN HEMTs fabricated with three typical process conditions. Implications for device reliability are discuss...

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Bibliographic Details
Main Authors: Roy, T, En Xia Zhang, Fleetwood, D M, Schrimpf, R D, Puzyrev, Y S, Pantelides, S T
Format: Conference Proceeding
Language:English
Subjects:
1/f noise
Aluminum gallium nitride
carbon substitutional impurity
electrical stress
Gallium nitride
HEMTs
high electron mobility transistors
MODFETs
nitrogen antisite
Noise
Noise measurement
Stress
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Summary:Low-frequency noise measurements and density functional theory calculations are combined to show that N-anti-site and C impurity defects can lead to changes in the low frequency noise of GaN/AlGaN HEMTs fabricated with three typical process conditions. Implications for device reliability are discussed.
ISSN:1541-7026
1938-1891
DOI:10.1109/IRPS.2011.5784512