Modeling and real-time control of plasma-based wafer etching

In this paper, modeling and control issues involved with the use of plasmas in wafer etching processes is analyzed. Controlling plasmas is a key aspect of semiconductor wafer manufacturing due to the increased performance expectations of plasma etching. These expectations are a reduction in feature...

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Bibliographic Details
Main Author: Schoenwald, D.A.
Format: Conference Proceeding
Language:English
Subjects:
Control system synthesis
Control systems
Etching
Plasma applications
Plasma displays
Plasma materials processing
Production
Semiconductor device manufacture
Semiconductor device modeling
Technological innovation
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Summary:In this paper, modeling and control issues involved with the use of plasmas in wafer etching processes is analyzed. Controlling plasmas is a key aspect of semiconductor wafer manufacturing due to the increased performance expectations of plasma etching. These expectations are a reduction in feature size and production with larger wafers. Innovations in plasma etching processes that can enable these performance expectations are the use of multiple-strap antenna systems to provide active uniformity control and stabilization of certain types of electronegative plasma instabilities. The implementation of these innovations requires the use of a model-based control system that will in itself lead to improved performance. This application of control theory to plasmas will also benefit thin film processing in general including flat panel displays and various types of coatings.
ISSN:0094-2898
2161-8135
DOI:10.1109/SSST.1997.581694