A new IGBT with a monolithic over-current protection circuit

A new IGBT structure with a monolithic overcurrent sensing and protection circuit has been developed. The feature of this device is a novel integration of a sensing and protection circuit which consists of a sensing IGBT, lateral n-MOSFET, polycrystalline silicon diode and resistor with an IGBT stru...

Full description

Saved in:
Bibliographic Details
Main Authors: Seki, Y., Harada, Y., Iwamuro, N., Kumagai, N.
Format: Conference Proceeding
Language:English
Subjects:
Diodes
Fabrication
Insulated gate bipolar transistors
MOSFET circuits
Protection
Resistors
RLC circuits
Silicon
Switching circuits
Voltage
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A new IGBT structure with a monolithic overcurrent sensing and protection circuit has been developed. The feature of this device is a novel integration of a sensing and protection circuit which consists of a sensing IGBT, lateral n-MOSFET, polycrystalline silicon diode and resistor with an IGBT structure. The conventional IGBT fabrication process is available to this device with only one more photomask. Comparison of not only a short circuit safe operating area but both a trade-off characteristics between an on-state voltage drop and a turn-off loss and reverse biased safe operating area with a conventional IGBT has been investigated. Since exhibiting a large short circuit safe operating area without deterioration of any other device characteristics, this device can be applied to not only a soft switching application like voltage resonant circuit but a hard switching application like snubberless inductive load circuit.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.1994.583634