High-speed resonant-tunneling photodetectors with low-switching energy

By taking advantage of the negative differential resistance characteristics of a resonant tunneling heterostructure, we have developed a novel photodetector which exhibits responsivities and gain-bandwidth efficiency products in excess of 10 A/W and 10 GHz/spl middot/A/W, respectively. Low switching...

Full description

Saved in:
Bibliographic Details
Published in:IEEE photonics technology letters 1997-06, Vol.9 (6), p.803-805
Main Authors: Moise, T.S., Kao, Y.-C., Goldsmith, C.L., Schow, C.L., Campbell, J.C.
Format: Article
Language:English
Subjects:
Circuits
Diodes
High speed optical techniques
Indium gallium arsenide
Optical amplifiers
Optical receivers
Optical sensors
Photodetectors
Resonant tunneling devices
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:By taking advantage of the negative differential resistance characteristics of a resonant tunneling heterostructure, we have developed a novel photodetector which exhibits responsivities and gain-bandwidth efficiency products in excess of 10 A/W and 10 GHz/spl middot/A/W, respectively. Low switching energy (30 fJ) and bit-error rates of less than 10/sup -9/ at data rates at 2 Gb/s have been achieved with this optically-switched resonant-tunneling diode.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.584996