Lasing properties of GaAs/AlGaAs lasers grown by MOVPE and bandgap-shifted by impurity free vacancy diffusion

Bandgap shifting by impurity-free vacancy diffusion was investigated using carbon p-doped quantum well laser structures. Spectra and L-I characteristics were measured and compared with as-grown material confirming that high lasing efficiency was maintained.

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Bibliographic Details
Main Authors: Ayling, S.G., Bryce, A.C., Marsh, J.H., Roberts, J.S.
Format: Conference Proceeding
Language:English
Subjects:
Epitaxial growth
Epitaxial layers
Gallium arsenide
Impurities
Optical device fabrication
Optical materials
Photonic band gap
Quantum well lasers
Silicon
Wavelength measurement
Online Access:Request full text
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Description
Summary:Bandgap shifting by impurity-free vacancy diffusion was investigated using carbon p-doped quantum well laser structures. Spectra and L-I characteristics were measured and compared with as-grown material confirming that high lasing efficiency was maintained.
DOI:10.1109/LEOS.1994.586623