InGaAs quantum well vertical-cavity surface-emitting lasers integration onto silicon substrates

Vertical-cavity surface-emitting lasers have been integrated onto silicon substrates using a new substrate removal process and low temperature PdGe contacts. A reduction in threshold current of 30% was observed for devices integrated onto silicon.

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Bibliographic Details
Main Authors: Mathine, D.L., Fathollahnejad, H., Droopad, R., Daryanani, S., Maracas, G.N.
Format: Conference Proceeding
Language:English
Subjects:
Gallium arsenide
Indium gallium arsenide
Optical arrays
Optical surface waves
Quantum well lasers
Silicon
Surface emitting lasers
Thermal conductivity
Threshold current
Vertical cavity surface emitting lasers
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Description
Summary:Vertical-cavity surface-emitting lasers have been integrated onto silicon substrates using a new substrate removal process and low temperature PdGe contacts. A reduction in threshold current of 30% was observed for devices integrated onto silicon.
DOI:10.1109/LEOS.1994.587003