InGaAs quantum well vertical-cavity surface-emitting lasers integration onto silicon substrates

Vertical-cavity surface-emitting lasers have been integrated onto silicon substrates using a new substrate removal process and low temperature PdGe contacts. A reduction in threshold current of 30% was observed for devices integrated onto silicon.

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Main Authors: Mathine, D.L., Fathollahnejad, H., Droopad, R., Daryanani, S., Maracas, G.N.
Format: Conference Proceeding
Language:English
Subjects:
Gallium arsenide
Indium gallium arsenide
Optical arrays
Optical surface waves
Quantum well lasers
Silicon
Surface emitting lasers
Thermal conductivity
Threshold current
Vertical cavity surface emitting lasers
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container_end_page 283 vol.1
container_issue
container_start_page 282
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creator Mathine, D.L.
Fathollahnejad, H.
Droopad, R.
Daryanani, S.
Maracas, G.N.
description Vertical-cavity surface-emitting lasers have been integrated onto silicon substrates using a new substrate removal process and low temperature PdGe contacts. A reduction in threshold current of 30% was observed for devices integrated onto silicon.
doi_str_mv 10.1109/LEOS.1994.587003
format conference_proceeding
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identifier ISBN: 0780314700
ispartof Proceedings of LEOS'94, 1994, Vol.1, p.282-283 vol.1
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Gallium arsenide
Indium gallium arsenide
Optical arrays
Optical surface waves
Quantum well lasers
Silicon
Surface emitting lasers
Thermal conductivity
Threshold current
Vertical cavity surface emitting lasers
title InGaAs quantum well vertical-cavity surface-emitting lasers integration onto silicon substrates
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