High-brightness light-emitting diodes grown by MBE on ZnSe substrates

High-brightness blue and green light-emitting diodes (LEDs) operating at peak wavelengths in the range 489-514 nm have been successfully synthesized, processed, and tested. The high-brightness LEDs are II-VI heterostructures grown by molecular beam epitaxy (MBE) using (100) ZnSe substrates. The doub...

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Bibliographic Details
Main Authors: Eason, D.B., Yu, Z., Hughes, W.C., Boney, C., Cook, J.W., Schetzina, J.F., Cantwell, G., Harsch, W.C.
Format: Conference Proceeding
Language:English
Subjects:
Chemical industry
Degradation
DH-HEMTs
Electrodes
Laboratories
Light emitting diodes
Molecular beam epitaxial growth
Substrates
Testing
Zinc compounds
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Summary:High-brightness blue and green light-emitting diodes (LEDs) operating at peak wavelengths in the range 489-514 nm have been successfully synthesized, processed, and tested. The high-brightness LEDs are II-VI heterostructures grown by molecular beam epitaxy (MBE) using (100) ZnSe substrates. The double-heterostructure (DH) LED devices consist of an n-type ZnSe:Cl layer, an active region consisting either of a ZnCdSe MQW (blue) or a ZnTeSe layer (green), and a p-type ZnSe:N layer deposited using a nitrogen plasma source.
DOI:10.1109/LEOS.1994.587027