Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes

The efficiency and electrical characteristics of GaN-based high-voltage light-emitting diodes (HV-LEDs) are investigated in detail. The spatial distribution of light output and simulation results showed that 100-V HV-LED with smaller microchips had superior current spreading. As a result, under 1-W...

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Bibliographic Details
Published in:IEEE electron device letters 2011-08, Vol.32 (8), p.1098-1100
Main Authors: Wang, C. H., Lin, D. W., Lee, C. Y., Tsai, M. A., Chen, G. L., Kuo, H. T., Hsu, W. H., Kuo, H. C., Lu, T. C., Wang, S. C., Chi, G. C.
Format: Article
Language:English
Subjects:
Applied sciences
Current density
Current spreading
Devices
efficiency droop
Electric potential
Electronics
Exact sciences and technology
Gallium nitride
high voltage
Light emitting diodes
Optoelectronic devices
Photonics
Proximity effect
Resistance
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Simulation
Spatial distribution
Spreading
Voltage
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Summary:The efficiency and electrical characteristics of GaN-based high-voltage light-emitting diodes (HV-LEDs) are investigated in detail. The spatial distribution of light output and simulation results showed that 100-V HV-LED with smaller microchips had superior current spreading. As a result, under 1-W operation, the luminous efficiency of 100-V HV-LED with smaller microchips was enhanced by 7.8% compared to that of 50-V HV-LED, while the efficiency droop behaviors were reduced from 28% in 50-V HV-LED to 25.8% in 100-V HV-LED. Moreover, smaller microchips exhibited lower series resistance and forward voltage, leading to higher wall-plug efficiency.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2153176