Highly efficient GaN-HEMT power amplifiers at 3.5 GHz and 5.5 GHz

This paper reports the design, implementation, and experimental results of two high efficiency GaN-HEMT power amplifiers (PAs) at 3.5 GHz and 5.5 GHz. A bare-die approach is used to eliminate package parasitics in conjunction with an in-house transistor model that enables investigation of the transi...

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Bibliographic Details
Main Authors: Saad, P, Nemati, H M, Andersson, K, Fager, C
Format: Conference Proceeding
Language:English
Subjects:
gallium nitride (GaN)
harmonic termination
HEMTs
high electron mobility transistor (HEMT)
Microwave amplifiers
Microwave FET integrated circuits
Microwave integrated circuits
Performance evaluation
power amplifier (PA)
power-added efficiency (PAE)
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Summary:This paper reports the design, implementation, and experimental results of two high efficiency GaN-HEMT power amplifiers (PAs) at 3.5 GHz and 5.5 GHz. A bare-die approach is used to eliminate package parasitics in conjunction with an in-house transistor model that enables investigation of the transistor intrinsic waveforms. With this as a basis, harmonic source-pull/load-pull simulations have been used to design and implement two state-of-the-art highly efficient harmonically tuned PAs. For the 3.5-GHz PA, large-signal measurement results show a PAE of 80%, a power gain of 15.5 dB, and an output power of 7 W, while for the 5.5-GHz PA, 5.6 W output power, 12.5 dB power gain, and 70% PAE are achieved.
DOI:10.1109/WAMICON.2011.5872865