10-Gb/s - 80-km operation of full C-band InP MZ modulator with linear-accelerator-type tiny in-line centipede electrode structure directly driven by logic IC of 90-nm CMOS process

InP MZ modulator of sub 1-V pp driving voltage with quasi-traveling-wave electrode structure and Logic IC of 90-nm CMOS process as its driver were developed. Their applicability was demonstrated through 10-Gb/s - 80-km transmission over full C-band.

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Bibliographic Details
Main Authors: Kato, T, Sato, M, Yamase, T, Sato, K, Noguchi, H
Format: Conference Proceeding
Language:English
Subjects:
(230.7020) Traveling-wave devices
(250.7360) Waveguide modulators
Driver circuits
Electrodes
Integrated circuits
Integrated optics
Optical modulation
Phase modulation
Online Access:Request full text
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Description
Summary:InP MZ modulator of sub 1-V pp driving voltage with quasi-traveling-wave electrode structure and Logic IC of 90-nm CMOS process as its driver were developed. Their applicability was demonstrated through 10-Gb/s - 80-km transmission over full C-band.
DOI:10.1364/ofc.2011.othp4