Scaling of copper seed layer thickness using plasma-enhanced ALD and an optimized precursor

A recently developed precursor, AbaCus, has been evaluated for use in ultra-low temperature copper deposition by PEALD. Film adhesion, platability and process window evaluation demonstrate a strong capability of this precursor to overcome current metallization challenges.

Saved in:
Bibliographic Details
Main Authors: Jiajun Mao, Eisenbraun, E., Omarjee, V., Korolev, A., Dussarrat, C.
Format: Conference Proceeding
Language:English
Subjects:
AbaCus
Adhesives
BEOL
Conductivity
Copper
PE-ALD
Plasma temperature
Temperature measurement
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A recently developed precursor, AbaCus, has been evaluated for use in ultra-low temperature copper deposition by PEALD. Film adhesion, platability and process window evaluation demonstrate a strong capability of this precursor to overcome current metallization challenges.
ISSN:1078-8743
2376-6697
DOI:10.1109/ASMC.2011.5898176