Low-k etching using CF3I, a path to overcome current BEOL integration issues

CF 3 I, a low greenhouse warming potential gas, has been used for low-k etching using an ICP reactor. Key parameters such as reactor pressure, bias power, ICP power and total gas flow rate were investigated to develop an optimized etch process. A comparison with standard fluorocarbons such as CF 4 ,...

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Bibliographic Details
Main Authors: Gildea, A. J., Long, J. C., Eisenbraun, E., Omarjee, V., Stafford, N., Doniat, F., Dussarrat, C.
Format: Conference Proceeding
Language:English
Subjects:
BEOL
CF 3 I
Etching
Gases
Iterative closest point algorithm
Low-k
Plasma
Plasmas
Resists
Silicon
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Summary:CF 3 I, a low greenhouse warming potential gas, has been used for low-k etching using an ICP reactor. Key parameters such as reactor pressure, bias power, ICP power and total gas flow rate were investigated to develop an optimized etch process. A comparison with standard fluorocarbons such as CF 4 , C 4 F 8 or CF 3 H has been made to illustrate the performances of this low environmental impact chemistry.
ISSN:1078-8743
2376-6697
DOI:10.1109/ASMC.2011.5898178