Characterization, modeling and minimization of transient threshold voltage shifts in MOSFETs

MOSFETs subjected to large-signal gate-source voltage pulses on microsecond to millisecond time scales exhibit transient threshold voltage shifts which can degrade the accuracy of analog circuits. In the present work, these threshold voltage shifts are characterized with respect to bias conditions,...

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Bibliographic Details
Main Authors: Tewksbury, T.L., Lee, H.-S.
Format: Conference Proceeding
Language:English
Subjects:
Analog circuits
Charge carriers
Circuit noise
Degradation
Minimization
MOSFETs
Pulse circuits
Stress
Temperature
Threshold voltage
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Summary:MOSFETs subjected to large-signal gate-source voltage pulses on microsecond to millisecond time scales exhibit transient threshold voltage shifts which can degrade the accuracy of analog circuits. In the present work, these threshold voltage shifts are characterized with respect to bias conditions, stress time and voltage, temperature, device size, and their relation to 1/f noise. The threshold voltage shifts are explained by a model in which channel charge carriers are exchanged with near-interface oxide traps by tunneling. Techniques for modeling and minimizing errors in circuits are presented.
DOI:10.1109/CICC.1993.590713