Flip-Chip Compatible Electroabsorption Modulator for up to 40 Gb/s, Integrated With 1.55 \mu DFB Laser and Spot-Size Expander

An electroabsorption modulator (EAM) was integrated with a distributed feedback laser and a spot-size expander forming an electro-modulated laser (EML) device. The EMLs are based on the conventional InP/InGaAsP material system and are designed for flip-chip mounting. They rely on a buried heterostru...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2011-07, Vol.47 (7), p.1036-1042
Main Authors: Kreissl, J., Bornholdt, C., Gaertner, T., Moerl, L., Przyrembel, G., Rehbein, W.
Format: Article
Language:English
Subjects:
Electro-modulated distributed feedback laser
flip-chip mounting
InGaAsP/InP
Integrated optics
Modulation
Optical coupling
Optical device fabrication
Optical waveguides
Power generation
Waveguide lasers
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Summary:An electroabsorption modulator (EAM) was integrated with a distributed feedback laser and a spot-size expander forming an electro-modulated laser (EML) device. The EMLs are based on the conventional InP/InGaAsP material system and are designed for flip-chip mounting. They rely on a buried heterostructure with Fe-doped blocking layers, and the EAM section is optically butt-joint-coupled. The performance of EMLs with two different EAM lengths is reported. 150 μm long EAM sections can be operated with an f 3dB bandwidth of 25 GHz allowing an error-free large signal modulation at 25 Gb/s with a dynamic extinction ratio (ER) of 11 dB. With 100 μm long EAM sections, the f 3dB bandwidth increases up to 33 GHz. Large signal modulation at 40 Gb/s is achieved with a dynamic ER of more than 8 dB. Transmission of 40 Gb/s over 2 km is demonstrated.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2011.2153180