Investigation of ultra-thin Al2O3 film as Cu diffusion barrier on low-k (k=2.5) dielectrics

Ultrathin Al 2 O 3 films were deposited by PEALD as Cu diffusion barrier on low-k (k=2.5) material. The thermal stability and electrical properties of the Cu/low k system with Al 2 O 3 layers with different thickness were studied after annealing. The AES, TEM and EDX results revealed that the ultrat...

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Bibliographic Details
Main Authors: Shao-Feng Ding, Qi Xie, Fei Chen, Hai-Sheng Lu, Shao-Ren Deng, Detavernier, C., Guo-Ping Ru, Yu-Long Jiang, Xin-Ping Qu
Format: Conference Proceeding
Language:English
Subjects:
Aluminum oxide
Annealing
Copper
Dielectrics
Silicon
Thermal stability
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Summary:Ultrathin Al 2 O 3 films were deposited by PEALD as Cu diffusion barrier on low-k (k=2.5) material. The thermal stability and electrical properties of the Cu/low k system with Al 2 O 3 layers with different thickness were studied after annealing. The AES, TEM and EDX results revealed that the ultrathin Al 2 O 3 films are thermally stable and have excellent Cu diffusion barrier performance. The electrical measurements of dielectric breakdown and TDDB tests further confirmed that the ultrathin Al 2 O 3 film is a potential Cu diffusion barrier in the Cu/low-k interconnects system.
ISSN:2380-632X
2380-6338
DOI:10.1109/IITC.2011.5940321