Future trends of HBT technology for commercial and defense applications

Heterojunction bipolar transistor (HBT) technology has been under development since the early 1980s. In the mid-1990s HBT technology has matured providing components for high volume low cost commercial wireless applications, as well as for high performance defense avionics, ground, and space applica...

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Main Authors: Oki, A.K., Streit, D.C., Umemoto, D.K., Tran, L.T., Kobayashi, K.W., Yamada, F.M., Grossman, P.C., Block, T., Lammert, M.D., Olson, S.R., Cowles, J., Hoppe, M.M., Yang, L., Gutierrez-Aitken, A., Kagiwada, R.S., Nojima, S., Rezek, E.A., Pratt, W., Neal, J., Seymour, P., Steel, V.
Format: Conference Proceeding
Language:English
Subjects:
Aerospace electronics
Application specific integrated circuits
Bipolar integrated circuits
Costs
HEMTs
Heterojunction bipolar transistors
MESFET integrated circuits
Production
Silicon
Space technology
Online Access:Request full text
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Summary:Heterojunction bipolar transistor (HBT) technology has been under development since the early 1980s. In the mid-1990s HBT technology has matured providing components for high volume low cost commercial wireless applications, as well as for high performance defense avionics, ground, and space applications. We discuss the status and future trends of HBT IC technology and production for defense and commercial applications, including advanced technology development, and comparison to MESFET, HEMT, and silicon based bipolar technology. Brief mention is made of power amplifiers and signal synthesizers.
DOI:10.1109/MTTTWA.1997.595125