Medium Voltage-High Power Converter Topologies Comparison Procedure, for a 6.6 kV Drive Application Using 4.5 kV IGBT Modules

This paper presents a general comparison procedure for medium voltage - high power multilevel converter topologies and semiconductors, which is mainly based on analyzing the performance limits of the converters output characteristics such as the output voltage, current, active power, efficiency, etc...

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Bibliographic Details
Published in:IEEE transactions on industrial electronics (1982) 2012-03, Vol.59 (3), p.1462-1476
Main Authors: Sanchez-Ruiz, A., Mazuela, M., Alvarez, S., Abad, G., Baraia, I.
Format: Article
Language:English
Subjects:
AC drives
cascaded H-bridge (CHB)
comparison procedure
Converters
Electric potential
Extrapolation
flying capacitors (FC)
insulated gate bipolar transistor (IGBT)
Insulated gate bipolar transistors
Junctions
Load modeling
medium voltage (MV) - high power (HP) applications converter
Modulation
Modules
multilevel converters
neutral point clamped (NPC)
Semiconductor device modeling
Semiconductors
stacked multicell (SMC)
Supplying
Switching frequency
Topology
Voltage
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Summary:This paper presents a general comparison procedure for medium voltage - high power multilevel converter topologies and semiconductors, which is mainly based on analyzing the performance limits of the converters output characteristics such as the output voltage, current, active power, efficiency, etc. Afterwards, the general procedure is applied to compare some of the most relevant converter topologies oriented to a 6.6 kV drive application supplying quadratic torque loads and using 4.5 kV IGBT modules. The paper concludes evaluating the comparison factors of the different converter topologies and selected semiconductors obtained by the proposed procedure. The proposed procedure can potentially be extrapolated to any desired application framework.
ISSN:0278-0046
1557-9948
DOI:10.1109/TIE.2011.2162213