Optimization of bulk GaAs Substrate removed electrooptic modulator using the Finite Element Method

In this paper we have proposed a new structure for bulk GaAs Substrate removed electrooptic modulators. This new structure has been optimized by using the Finite Element Method to achieve a maximum matching between microwave and optical waves, half-wave voltage length product, V π L as low as 5 V-cm...

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Bibliographic Details
Main Authors: Vahidi, H., Abedi, K.
Format: Conference Proceeding
Language:English
Subjects:
Electrooptic coefficient
Electrooptic modulators
Microwave theory and techniques
Optical refraction
Optical variables control
semiconductor electrooptic modulators
Substrate removed
Substrates
the Finite Element Method
travelling wave
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Summary:In this paper we have proposed a new structure for bulk GaAs Substrate removed electrooptic modulators. This new structure has been optimized by using the Finite Element Method to achieve a maximum matching between microwave and optical waves, half-wave voltage length product, V π L as low as 5 V-cm and electrical bandwidth as high as 220 GHz.
ISSN:2164-7054