High gain and high efficiency K-band power HEMT with WSi/Au T-shaped gate

We have developed WSi/Au T-shaped buried gate pseudomorphic HEMT with the good uniformity of recess current by using a selective etching process and with a high off-state break down voltage of over 19 V. A 1.4 W output power has been obtained with a power-added efficiency of 55.6% and an associated...

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Bibliographic Details
Main Authors: Kunii, T., Yoshida, N., Miyakuni, S., Shiga, T., Oku, T., Kitano, T., Udomoto, J., Komaru, M., Inoue, A., Tsuji, S., Tanino, N., Ishikawa, T., Mitsui, Y.
Format: Conference Proceeding
Language:English
Subjects:
Etching
FETs
Frequency
Gain
Gold
HEMTs
K-band
PHEMTs
Power generation
Voltage
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Summary:We have developed WSi/Au T-shaped buried gate pseudomorphic HEMT with the good uniformity of recess current by using a selective etching process and with a high off-state break down voltage of over 19 V. A 1.4 W output power has been obtained with a power-added efficiency of 55.6% and an associated gain of 9.2 dB under high voltage operation of Vd=10 V at 18 GHz. This is the highest gain and efficiency achieved by a single FET chip with over a watt output power at this frequency.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1997.596539