High efficiency, low adjacent channel leakage 2-V operation GaAs power MESFET amplifier for 1.9-GHz digital cordless phone system

A low-voltage GaAs power amplifier for 1.9-GHz digital mobile communication applications such as PHS handsets has been developed, using refractory WNx/W self-aligned gate MESFETs with p-pocket layers. This power amplifier operates with a single low 2-V supply, and an output power of 21.0 dBm, a powe...

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Bibliographic Details
Main Authors: Nagaoka, M., Wakimoto, H., Kawakyu, K., Nishihori, K., Kitaura, Y., Sasaki, T., Kameyama, A., Uchitomi, N.
Format: Conference Proceeding
Language:English
Subjects:
Batteries
FETs
Gallium arsenide
High power amplifiers
MESFETs
Operational amplifiers
Power amplifiers
Quadrature phase shift keying
Telephone sets
Voltage
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Description
Summary:A low-voltage GaAs power amplifier for 1.9-GHz digital mobile communication applications such as PHS handsets has been developed, using refractory WNx/W self-aligned gate MESFETs with p-pocket layers. This power amplifier operates with a single low 2-V supply, and an output power of 21.0 dBm, a power gain of 22.3 dB, a low dissipated current of 162.9 mA and a high power-added efficiency of 38.5% were attained with a low 600-kHz adjacent channel leakage power of -58.0 dBc for 1.9-GHz /spl pi//4-shifted QPSK modulated input.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1997.596571