Functionalization of nanoscaled 2 nm-thick ALD-HfO2 layer by rapid thermal annealing and CF4 plasma for LAPS NH4+ detection

In this work, discussing the detection of NH 4 + ion based on LAPS with functionalized 2 nm-thick ALD-HfO 2 film using RTA and CF 4 plasma is demonstrated. The annealing treatment at 500, 700, and 900°C were performed on ALD-HfO 2 film and the plasma treatment for 1, 3, and 5 min were performed on A...

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Bibliographic Details
Main Authors: Jung-Hsiang Yang, Tseng-Fu Lu, Jer-Chyi Wang, Pijanswska, D. G., Chi-Hang Chin, Cheng-En Lue, Chia-Ming Yang, Chao-Sung Lai
Format: Conference Proceeding
Language:English
Subjects:
ammonium ion (NH 4 + )
and carbon tetrafluoride (CF 4 ) plasma
Annealing
Interference
light addressable potentiometric sensor (LAPS)
Linearity
Plasmas
rapid thermal annealing (RTA)
Sensitivity
Sensors
Surface treatment
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Summary:In this work, discussing the detection of NH 4 + ion based on LAPS with functionalized 2 nm-thick ALD-HfO 2 film using RTA and CF 4 plasma is demonstrated. The annealing treatment at 500, 700, and 900°C were performed on ALD-HfO 2 film and the plasma treatment for 1, 3, and 5 min were performed on ALD-HfO 2 film with 900°C annealing. In the results, the response for NH 4 + ion detection was decreased with increasing annealing temperature and increased with increasing plasma time. The optimum sensitivity of 37.28mV/pNH 4 was achieved with 900°C annealing and 5 min CF 4 plasma.
ISSN:2159-547X
DOI:10.1109/TRANSDUCERS.2011.5969270