A new Multi-Harmonic Volterra model dedicated to GaN packaged transistor or SSPA for pulse application

This paper presents a new macro modeling methodology for solid-state amplifiers (SSAs) and packaged transistors used in radar systems. The model topology is based on the principle of the harmonic superposition recently introduced by the Agilent X-parameters(TM) combined with dynamic Volterra theory....

Full description

Saved in:
Bibliographic Details
Main Authors: Demenitroux, W., Maziere, C., Gatard, E., Dellier, S., Saboureau, C., Campovecchio, M., Quere, R.
Format: Conference Proceeding
Language:English
Subjects:
Behavioral modeling
design flow
GaN packaged transistors
Instruments
Marketing and sales
memory effects
Pulse measurements
Size measurement
SSPA
Wireless communication
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper presents a new macro modeling methodology for solid-state amplifiers (SSAs) and packaged transistors used in radar systems. The model topology is based on the principle of the harmonic superposition recently introduced by the Agilent X-parameters(TM) combined with dynamic Volterra theory. In this work, we focus on a pulsed identification method which has been made from time domain load pull measurement performed on a packaged transistor. The model has been validated by pulsed RF measurement in the optimum area for several frequencies.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2011.5972829